型号:

EPC1014

RoHS:
制造商:EPC描述:TRANS GAN 40V 10A BUMPED DIE
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
EPC1014 PDF
应用说明 Thermal Performance of eGaN® FETs
Assembling eGaN® FETS
Using eGaN® FETs
产品培训模块 eGaN™ Basics
eGaN™ Power Transistors Characteristics
Drivng eGaN™ Power Transistors
eGaN FETs for DC-DC Conversion
eGaN FET Reliability
产品变化通告 EPC1xxx Series Obsolescence 09/Sept/2011
RoHS指令信息 Lead Free/RoHS Statement
标准包装 1,000
系列 eGaN®
FET 型 GaNFET N 通道,氮化镓
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 40V
电流 - 连续漏极(Id) @ 25° C 10A
开态Rds(最大)@ Id, Vgs @ 25° C 16 毫欧 @ 5A,5V
Id 时的 Vgs(th)(最大) 2.5V @ 2mA
闸电荷(Qg) @ Vgs 3nC @ 5V
输入电容 (Ciss) @ Vds 280pF @ 20V
功率 - 最大 -
安装类型 表面贴装
封装/外壳 5-LGA
供应商设备封装 5-LGA(1.7x1.1)
包装 带卷 (TR)
产品目录页面 1599 (CN2011-ZH PDF)
其它名称 917-1008-2
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